TPC6108 2008-12-04 1 toshiba field effect transistor silicon p-chann el mos type (u-mos ) TPC6108 notebook pc applications portable equipment applications ? small footprint due to small and thin package ? low drain-source on-resistance: r ds (on) = 50 m (typ.) ? high forward transfer admittance: |y fs | = 7.4 s (typ.) ? low leakage current: i dss = ? 10 a (max) (v ds = ? 30 v) ? enhancement mode: v th = ? 0.8 to ? 2.0 v (v ds = ? 10 v, i d = ? 1 ma) absolute maximum ratings (ta = 25c) characteristics symbol rating unit drain-source voltage v dss ?30 v drain-gate voltage (r gs = 20 k ) v dgr ?30 v gate-source voltage v gss 20 v dc (note 1) i d ?4.5 drain current pulse (note 1) i dp ?18 a drain power dissipation (t = 5 s) (note 2a) p d 2.2 drain power dissipation (t = 5 s) (note 2b) p d 0.7 w single-pulse avalanche energy (note 3) e as 1.3 mj avalanche current i ar ?2.25 a repetitive avalanche energy single-device value at dual operation (note 4) e ar 0.22 mj channel temperature t ch 150 c storage temperature range t stg ? 55 to 150 c note: using continuously under heavy loads (e.g . the application of high temperature/cu rrent/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliabilit y handbook (?handling precautions?/derating concept and methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). thermal characteristics circuit configuration characteristics symbol max unit thermal resistance, channel to ambient (t = 5 s) (note 2a) r th (ch-a) 56.8 c/w thermal resistance, channel to ambient (t = 5 s) (note 2b) r th (ch-a) 178.5 c/w note: for notes 1 to 5, see page 3. caution: this transistor is an electros tatic-sensitive device. handle with care. unit: mm jedec D jeita D toshiba 2-3t1a weight: 0.011 g (typ.) drain drain gate source drain drain 6 4 1 2 3 5
TPC6108 2008-12-04 2 electrical characteristics (ta = 25c) characteristic symbol test condition min typ. max unit gate leakage current i gss v gs = 16 v, v ds = 0 v ? ? 10 a drain cut-off current i dss v ds = ?30 v, v gs = 0 v ? ? ?10 a v (br) dss i d = ?10 ma, v gs = 0 v ? 30 ? ? drain-source breakdown voltage v (br) dsx i d = ?10 ma, v gs = 20 v ? 15 ? ? v gate threshold voltage v th v ds = ?10 v, i d = ? 1 ma ?0.8 ? ? 2.0 v r ds (on) v gs = ?4.5 v, i d = ?2.2 a ? 75 100 drain-source on-resistance r ds (on) v gs = ?10 v, i d = ?2.2 a ? 50 60 m forward transfer admittance |y fs | v ds = ?10 v, i d = ?2.2 a 3.7 7.4 ? s input capacitance c iss ? 570 ? reverse transfer capacitance c rss ? 75 ? output capacitance c oss v ds = ?10 v, v gs = 0 v, f = 1 mhz ? 85 ? pf rise time t r ? 3.5 ? turn-on time t on ? 12 ? fall time t f ? 21 ? switching time turn-off time t off duty 1%, t w = 10 s ? 70 ? ns total gate charge (gate-source plus gate-drain) q g ? 13 ? gate-source charge1 q gs1 ? 1.8 ? gate-drain (?miller?) charge q gd v dd ? 24 v, v gs ? 10 v, i d = ?4.5 a ? 2.5 ? nc source-drain ratings and characteristics (ta = 25c) characteristic symbol test condition min typ. max unit drain reverse current pulse (note 1) i drp ? ? ? ? 18 a forward voltage (diode) v dsf i dr = ?4.5 a, v gs = 0 v ? ? 1.2 v r l = 6.8 v dd ? 15 v ?10 v v gs 0 v 4.7 i d = ?2.2 a v out
TPC6108 2008-12-04 3 marking (note 5) note 1: ensure that the channel temperature does not exceed 150 . note 2: (a) device mounted on a glass-epoxy board (a) (t = 5 s) (b) device mounted on a glass-epoxy board (b) (t = 5 s) note 3: v dd = ? 24 v, t ch = 25c (initial), l = 0.2 mh, r g = 25 , i ar = -2.25 a note 4: repetitive rating: pulse width limited by max channel temperature note 5: to the lower left of the part no. marking indicates pin 1. (a) fr-4 25.4 25.4 0.8 (unit: mm) (b) fr-4 25.4 25.4 0.8 (unit: mm) part no. (or abbreviation code) s3h a line indicates l ead (pb)- f ree package lot code (month) lot no. (weekly code) pin #1 lot code (year) product-specific code
TPC6108 2008-12-04 4 i d ? v ds i d ? v ds i d ? v gs v ds ? v gs |y fs | ? i d r ds (on) ? i d ? 2 ? 3 ? 4 ? 5 0 ? 4 ? 6 ? 8 ? 10 ? 2 0 ? 1 ? 4 ? 6 ? 8 ? 10 0 ? 0.4 ? 0.6 ? 0.8 ? 1.0 ? 0.2 0 ? 2 ? 100 0.1 1 ? 0.1 ? 1 ? 10 ? 100 10 0 ? 2 ? 3 ? 4 ? 5 ? 0.4 ? 0.6 ? 0.8 ? 1.0 0 ? 0.2 ? 2 ? 4 0 ? 5 ? 10 ? 15 0 ? 1 10 1000 ? 5 100 ? 1 ? 3 ? 10 ? 1 ? 0. 1 common source ta = 25c pulse test v gs = ? 2.2v ? 4 ? 3 ? 2.6 ? 2.4 ? 2.8 ? 10 ? 3.5 ? 4.5 common source ta = 25c pulse test v gs = ? 2.2v ? 4 ? 3 ? 2.6 ? 2.4 ? 2.8 ? 10 ? 3.5 ? 4.5 ta = ? 55c 100 25 common source v ds = ? 10 v pulse test common source ta = 25c pulse test i d = ? 4.5 a ? 1.1 ? 2.2 100 common source v ds = ? 10 v pulse test ta = ? 55c 25 100 common source ta = 25c pulse test v gs = ? 4.5 v ? 10 forward transfer admittance ? y fs ? (s) drain-source voltage v ds (v) drain current i d (a) drain-source voltage v ds (v) drain current i d (a) gate-source voltage v gs (v) drain current i d (a) gate-source voltage v gs (v) drain current i d (a) drain current i d (a) drain-source on resistance r ds (on) (m ) drain-source voltage v ds (v)
TPC6108 2008-12-04 5 v th ? ta 0 ? 80 0 40 80 120 160 ? 40 ? 2.0 ? 0.4 ? 1.2 ? 0.8 ? 1.6 r ds (on) ? ta 0 50 100 ? 40 ? 80 160 0 40 120 80 i dr ? v ds p d ? ta 2.0 0.5 1.0 1.5 0 0 80 40 160 120 ? 40 0 ? 30 ? 20 ? 10 0 8 12 4 ? 8 ? 4 ? 16 0 ? 12 150 10 ? 0.1 ? 100 100 ? 1 ? 10 10000 0.2 0 0.6 1.0 1.2 ? 0.1 ? 1 ? 100 ? 10 1000 common source pulse test i d = ? 1.1/ ? 2.2/ ? 4.5 a v gs = ? 10 v v gs = ? 4.5 v i d = ? 1.1/ ? 2.2/ ? 4.5 a common source ta = 25c pulse test ? 10 ? 5 ? 3 ? 1 v gs = 0 v common source v gs = 0 v f = 1 mhz ta = 25c c iss c oss c r ss common source v gs = ? 10 v i d = ? 1 ma pulse test (2) dc (1) t = 5s (2) t = 5s (1) dc (1) device mounted on a glass-epoxy board (a) (note 2a) (2) device mounted on a glass-epoxy board (b) (note 2b) 2.5 16 20 common source i d = ? 4.5 a ta = 25c pulse test v ds ? 6 v ? 12 v v dd = ? 24 v v gs ambient temperature ta (c) gate threshold voltage v th (v) ambient temperature ta (c) total gate charge q g (nc) capacitance c (pf) capacitance ? v ds drain-source voltage v ds (v) drain-source on-resistance r ds (on) ( ? ) ambient temperature ta (c) drain reverse current i dr (a) drain-source voltage v ds (v) drain power dissipation p d (w) drain-source voltage v ds (v) gate-source voltage v gs (v) dynamic input / output characteristics 0.4 0.8
TPC6108 2008-12-04 6 r th ? t w ? 0.1 ? 1 ? 10 0.1 1m 10m 100m 1 10 100 1000 1 10 100 ? 1 ? 100 ? 0.1 ? 100 ? 10 1000 single pulse device mounted on a glass-epoxy board (b) (note 2b) device mounted on a glass-epoxy board ( a ) ( note 2a ) single pulse ta=25 curves must be derated linearly with increase in temperature . i d max (pulse) * 10 ms * 1 ms * v dss max transient thermal impedance r th (c/w) safe operating area drain-source voltage v ds (v) pulse width t w (s) drain current i d (a)
TPC6108 2008-12-04 7 restrictions on product use 20070701-en general ? the information contained herein is subject to change without notice. ? toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity a nd vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshib a products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconduct or devices,? or ?toshiba semiconductor reliability handbook? etc. ? the toshiba products listed in this document are in tended for usage in general electronics applications (computer, personal equipment, office equipment, measuri ng equipment, industrial robotics, domestic appliances, etc.).these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage incl ude atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, et c.. unintended usage of toshiba products listed in his document shall be made at the customer?s own risk. ? the products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. ? please contact your sales representative for product- by-product details in this document regarding rohs compatibility. please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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